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AM29LV641ML120EI 데이터시트(PDF) 58 Page - SPANSION |
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58 / 60 page 56 Am29LV641MH/L December 21, 2005 DA TA SH EET REVISION SUMMARY Revision A (August 3, 2001) Initial release as abbreviated Advance Information data sheet. Revision A+1 (October 3, 2001) Global Added 120 ns speed option. Ordering Information Changed operating voltage range for 90 ns device. Physical Dimensions Added section. Revision B (March 14, 2002) Global Expanded data sheet to full specification version. Revision B+1 (April 26, 2002) MirrorBit 64 Mbit Device Family Deleted Am29LV641MT/B. Figure 2, In-System Sector Group Protect/Unprotect Algorithms Added A3 and A2 address requirement. Sector Group Protection/Unprotection Deleted reference to alternate method of sector pro- tection. Autoselect Command Substituted text with ID code table for easier refer- ence. Table 10, Command Definitions Combined Notes 4 and 5 from Revision B. Corrected number of cycles indicated for Write-to-Buffer and Au- toselect Device ID command sequences. Figure 25, Sector Group Protect and Unprotect Timing Diagram In the note, added A3 and A2 address requirement. Revision B+2 (August 1, 2002) Mirrorbit 64 MBIT Device Family Added 64 Fortified BGA to table. Program Suspend/Program Resume Command Sequence Changed program operation wait time from 1ms to 15 μs. Figure 5. Program Suspend/Program Resume Changed wait from 1ms to 15 μs. Erase Resume/Erase Resume Commands Added a maximum of 20 μs. Alternate CE# Controlled Erase and Program Operations Added T RH parameter to table. Special package handling instructions Modified the special handling wording. DC Characteristics table Deleted the I ACC specification row. CFI Changed text in the third paragraph of CFI to read “reading array data.” Revision B+3 (September 10, 2002) Product Selector Guide Added Note 2. Ordering Information Added Note 1. Sector Erase Command Sequence Deleted statement that describes the outcome of when the Embedded Erase operation is in progress. Revision B+4 (October 15, 2002) Erase and Programming Performance Changed values for typical and maximum times on word program time and write buffer program time to TBD. Inserted TBD for maximum chip erase time. Revision B+5 (November 26, 2002) Product Selector Guide and Read-Only Characteristics Added a 30 ns option to t PACC and tOE standard for the 112R and 120R speed options. Customer Lockable: SecSi Sector NOT Programmed or Protected at the factory. Added second bullet, SecSi sector-protect verify text and figure 3. SecSi Sector Flash Memory Region, and Enter SecSi Sector/Exit SecSi Sector Command Sequence Noted that the ACC function and unlock bypass modes are not available when the SecSi sector is enabled. |
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