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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FDD8770 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FDD8770 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDD8770/FDU8770 Rev. A www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 25 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C 13.6 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V 1 µA TJ = 150°C 250 IGSS Gate to Source Leakage Current VGS = ±20V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.6 2.5 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -5.9 mV/°C rDS(on) Drain to Source On Resistance VGS = 10V, ID = 35A 3.3 4.0 m Ω VGS = 4.5V, ID = 35A 4.0 5.5 VGS = 10V, ID = 35A TJ = 175°C 4.8 5.9 Dynamic Characteristics Ciss Input Capacitance VDS = 13V, VGS = 0V, f = 1MHz 2795 3720 pF Coss Output Capacitance 685 915 pF Crss Reverse Transfer Capacitance 450 675 pF Rg Gate Resistance f = 1MHz 1.5 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = 13V, ID = 35A VGS = 10V, RGS = 5Ω 10 20 ns tr Rise Time 12 22 ns td(off) Turn-Off Delay Time 49 78 ns tf Fall Time 25 40 ns Qg Total Gate Charge VGS = 0V to 10V VDD = 13V ID = 35A Ig = 1.0mA 52 73 nC Qg Total Gate Charge VGS = 0V to 5V 29 41 nC Qgs Gate to Source Gate Charge 8.1 nC Qgd Gate to Drain “Miller”Charge 11 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 35A 0.84 1.25 V VGS = 0V, IS = 15A 0.79 1.0 trr Reverse Recovery Time IF = 35A, di/dt = 100A/µs 32 48 ns Qrr Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 25 38 nC Notes: 1: Pulse time < 300 µs, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.3mH, IAS = 27.5A ,VDD = 23V, VGS = 10V. |
유사한 부품 번호 - FDD8770 |
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