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SI3812DV 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI3812DV 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 6 page Si3812DV Vishay Siliconix www.vishay.com 4 Document Number: 71069 S-03510—Rev. D, 16-Apr-01 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10–3 10–2 1 10 600 10–1 10–4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0.01 0 1 6 8 2 4 10 30 0.1 Single Pulse Power, Junction-to-Ambient Time (sec) 0.00 0.08 0.16 0.24 0.32 0.40 0 1234 5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage ID = 2.4 A ID = 1 A 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage VSD – Source-to-Drain Voltage (V) –0.6 –0.4 –0.2 –0.0 0.2 0.4 –50 –25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ – Temperature (_C) |
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