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IRFP150VPBF 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRFP150VPBF
상세내용  HEXFET Power MOSFET
PDF  8 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRFP150VPbF
HEXFET® Power MOSFET
07/07/04
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.1
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
www.irf.com
1
VDSS = 100V
RDS(on) = 24mΩ
ID = 47A
S
D
G
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 packcage because of its isolated
mounting hole.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
46
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
32
A
IDM
Pulsed Drain Current

230
PD @TC = 25°C
Power Dissipation
140
W
Linear Derating Factor
0.91
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

28
A
EAR
Repetitive Avalanche Energy

20
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.8
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
PD - 95515
TO-247AC




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