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IRL1004SPBF 데이터시트(Datasheet) 2 Page - International Rectifier

부품명 IRL1004SPBF
상세내용  HEXFET Power MOSFET
PDF  10 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRL1004S/LPbF
2
www.irf.com
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ƒ I
SD ≤ 78A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
‚ Starting TJ = 25°C, L = 0.23mH
RG = 25Ω, IAS = 78A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
‡
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
‡
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 78A, VGS = 0V
„
trr
Reverse Recovery Time
–––
78
120
ns
TJ = 25°C, IF = 78A
Qrr
Reverse RecoveryCharge
–––
180
270
nC
di/dt = 100A/µs
„†
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
130
…
520
A
… Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
† Uses IRL1004 data and test conditions
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
VGS = 0V, ID = 250
µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.04
–––
V
/°C Reference to 25°C, ID = 1mA
–––
––– 0.0065
VGS = 10V, ID = 78A
„
–––
––– 0.009
VGS = 4.5V, ID = 65A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
V
VDS = VGS, ID = 250
µA
gfs
Forward Transconductance
63
––– –––
SVDS = 25V, ID = 78A
†
–––
–––
25
µA
VDS = 40V, VGS = 0V
–––
–––
250
VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -16V
Qg
Total Gate Charge
–––
–––
100
ID = 78A
Qgs
Gate-to-Source Charge
–––
–––
32
nC
VDS = 32V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
43
VGS = 4.5V, See Fig. 6 and 13
„†
td(on)
Turn-On Delay Time
–––
16
–––
VDD = 20V,
tr
Rise Time
–––
210
–––
ID = 78A,
td(off)
Turn-Off Delay Time
–––
25
–––
ns
RG = 2.5Ω,
tf
Fall Time
–––
14
–––
RD = 0.18Ω, See Fig. 10
„†
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
5330 –––
VGS = 0V
Coss
Output Capacitance
–––
1480 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
320
–––
ƒ = 1.0MHz, See Fig. 5
…†
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Static Drain-to-Source On-Resistance
IGSS
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
7.5
nH




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