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IRL1004S 데이터시트(PDF) 2 Page - National Semiconductor (TI) |
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IRL1004S 데이터시트(HTML) 2 Page - National Semiconductor (TI) |
2 / 10 page IRL1004S/1004L 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) I SD ≤ 78A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Starting TJ = 25°C, L = 0.23mH RG = 25Ω, IAS = 78A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0V trr Reverse Recovery Time ––– 78 120 ns TJ = 25°C, IF = 78A Qrr Reverse RecoveryCharge ––– 180 270 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 130 520 A
Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the package refer to Design Tip # 93-4 * When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Uses IRL1004 data and test conditions Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.0065 VGS = 10V, ID = 78A ––– ––– 0.009 Ω VGS = 4.5V, ID = 65A VGS(th) Gate Threshold Voltage 1.0 ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 63 ––– ––– S VDS = 25V, ID = 78A ––– ––– 25 µA VDS = 40V, VGS = 0V ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -16V Qg Total Gate Charge ––– ––– 100 ID = 78A Qgs Gate-to-Source Charge ––– ––– 32 nC VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 43 VGS = 4.5V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 16 ––– VDD = 20V, tr Rise Time ––– 210 ––– ID = 78A, td(off) Turn-Off Delay Time ––– 25 ––– ns RG = 2.5Ω, tf Fall Time ––– 14 ––– RD = 0.18Ω, See Fig. 10 Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 5330 ––– VGS = 0V Coss Output Capacitance ––– 1480 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 7.5 nH |
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