BF1206F datasheet(3/20 Pages) PHILIPS

부품명	BF1206F

상세설명	Dual N-channel dual gate MOSFET

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3 / 20 page

BF1206F_1

Product data sheet

Rev. 01 — 30 January 2006

3 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

4.

Marking

5.

Limiting values

[1]

Tsp is the temperature at the solder point of the source lead.

6.

Thermal characteristics

Table 4:

Marking

Type number

Marking code

BF1206F

2N

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per MOSFET

VDS

drain-source voltage (DC)

-

6

V

ID

drain current (DC)

-

30

mA

IG1

gate1 current

-

±10

mA

IG2

gate2 current

-

±10

mA

Ptot

total power dissipation

Tsp ≤ 107 °C

[1] -

180

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Fig 1.

Power derating curve

Tsp (˚C)

0

200

150

50

100

001aac193

100

150

50

200

250

Ptot

(mW)

0

Table 6:

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-sp)

thermal resistance from junction

to solder point

240

K/W

유사한 부품 번호 - BF1206F

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Quanzhou Jinmei Electro...	BF1206F	213Kb / 17P	Dual N-channel dual gate MOSFET
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유사한 설명 - BF1206F

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NXP Semiconductors	BF1214	211Kb / 18P	Dual N-channel dual gate MOSFET Rev. 01-30 October 2007
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Quanzhou Jinmei Electro...	BF1208D	262Kb / 22P	Dual N-channel dual gate MOSFET
Quanzhou Jinmei Electro...	BF1214	218Kb / 18P	Dual N-channel dual gate MOSFET
NXP Semiconductors	BF1208	167Kb / 22P	Dual N-channel dual gate MOSFET Rev. 01-16 March 2005
Quanzhou Jinmei Electro...	BF1208_2015	175Kb / 22P	Dual N-channel dual gate MOSFET
	BF1206F	213Kb / 17P	Dual N-channel dual gate MOSFET
	BF1210	260Kb / 21P	Dual N-channel dual gate MOSFET
	BF1207_2015	168Kb / 22P	Dual N-channel dual gate MOSFET

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BF1206F 데이터시트(PDF) 3 Page - NXP Semiconductors

BF1206F 데이터시트(HTML) 3 Page - NXP Semiconductors

유사한 부품 번호 - BF1206F

유사한 설명 - BF1206F

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