전자부품 데이터시트 검색엔진 |
|
BLS2933-100 데이터시트(PDF) 5 Page - NXP Semiconductors |
|
BLS2933-100 데이터시트(HTML) 5 Page - NXP Semiconductors |
5 / 12 page BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 1 August 2006 5 of 12 Philips Semiconductors BLS2933-100 Microwave power LDMOS transistor VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %; PL = 100 W. (1) f = 2.9 MHz. (2) f = 3.0 MHz. (3) f = 3.1 MHz. (4) f = 3.2 MHz. (5) f = 3.3 MHz. VDS =32V; IDq = 20 mA; tp = 200 µs; δ = 12 %. Fig 2. Power gain and drain efficiency as functions of frequency; typical values Fig 3. Power gain as a function of load power; typical values (1) f = 2.9 MHz. (2) f = 3.0 MHz. (3) f = 3.1 MHz. (4) f = 3.2 MHz. (5) f = 3.3 MHz. VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %. (1) f = 2.9 MHz. (2) f = 3.0 MHz. (3) f = 3.1 MHz. (4) f = 3.2 MHz. (5) f = 3.3 MHz. VDS =32V; IDq = 20 mA; tp = 200 µs; δ = 12 %. Fig 4. Efficiency as a function of power load; typical values Fig 5. Load power as a function of input power; typical values 001aaf066 f (GHz) 2.8 3.4 3.2 3.0 4 6 2 8 10 Gp (dB) ηD (%) 0 20 30 10 40 50 0 ηD Gp PL (W) 0 160 120 40 80 001aaf070 4 6 2 8 10 Gp (dB) 0 (1) (2) (3) (4) (5) PL (W) 0 160 120 40 80 001aaf071 20 30 10 40 50 ηD (%) 0 (1) (2) (3) (4) (5) 001aaf072 Pi (W) 030 20 10 80 40 120 160 PL (W) 0 (1) (2) (3) (4) (5) |
유사한 부품 번호 - BLS2933-100 |
|
유사한 설명 - BLS2933-100 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |