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IRFZ24NPBF 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRFZ24NPBF
상세내용  HEXFET Power MOSFET
PDF  8 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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HEXFET® Power MOSFET
IRFZ24NPbF
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
l
Advanced Process Technology
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Dynamic dv/dt Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
Description
2/10/04
VDSS = 55V
RDS(on) = 0.07Ω
ID = 17A
S
D
G
TO-220AB
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case
––––
––––
3.3
RθCS
Case-to-Sink, Flat, Greased Surface
––––
0.50
––––
°C/W
RθJA
Junction-to-Ambient
––––
––––
62
Thermal Resistance
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
17
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
12
A
IDM
Pulsed Drain Current #
68
PD @TC = 25°C
Power Dissipation
45
W
Linear Derating Factor
0.30
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ‚
71
mJ
IAR
Avalanche Current
10
A
EAR
Repetitive Avalanche Energy
4.5mJ
dv/dt
Peak Diode Recovery dv/dt ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
www.irf.com
1
PD - 94990
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Lead-Free




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