BUX81 datasheet(2/2 Pages) SEME-LAB | HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR

2 page

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)CEO

V(BR)CER

VCE(sat)*

VBE(sat)*

ICES

IEBO

Cobo

ton

BUX81

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

IC = 100mA

IB = 0

IC = 100mA

RBE = 50Ω

IB = 0

IC = 5A

IB = 1.0A

IC = 8A

IB = 2.5A

IC = 5A

IB = 1.0A

IC = 8A

IB = 2.5A

VCE = 1000V

VBE = 0

TC = +125°C

IC = 0

VEB = 10V

IC = 0.5A

VCE = 10V

IE = 0

VCB = 20V

IC = 5A

VCC = 250V

IB1 = 1A

IB2 = -2A

Collector - Emitter Breakdown

Voltage

Collector - Emitter Breakdown

Voltage

Collector – Emitter

Saturation Voltage

Base – Emitter

Saturation Voltage

Collector Cut-off Current

Emitter Cut-off Current

Transition Frequency

Output Capacitance f=100kHz

Turn–On Time

Storage Time

Fall Time

450

500

1.5

3.0

1.4

1.8

105

0.5

3.5

0.8

MHz

µs

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)

THERMAL CHARACTERISTICS

Rth j-mb

Thermal Resistance Junction to Case

1.65

°C/W

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Document Number 5865

Issue 1

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