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IRFW820A 데이터시트(Datasheet) 3 Page - Fairchild Semiconductor

부품명 IRFW820A
상세내용  Advanced Power MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
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 3 page
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IRFW/I820A
10
-1
10
0
10
1
10
-1
10
0
@ Notes :
1. 250
µs Pulse Test
2. T
C = 25
oC
V
GS
Top :
15V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
Bottom : 4.5V
V
DS
, Drain-Source Voltage [V]
24
68
10
10
-2
10
-1
10
0
25
oC
150
oC
- 55
oC
@ Notes :
1. V
GS
= 0 V
2. V
DS = 50 V
3. 250
µs Pulse Test
V
GS
, Gate-Source Voltage [V]
02468
10
0
2
4
6
@ Note : T
J = 25
oC
V
GS = 20 V
V
GS = 10 V
I
D
, Drain Current [A]
10
0
10
1
0
200
400
600
C
iss= Cgs+ Cgd ( Cds= shorted )
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
0
5
10
V
DS = 400 V
V
DS = 250 V
V
DS = 100 V
@ Notes : I
D = 2.5 A
Q
G
, Total Gate Charge [nC]
0.20.40.60.81.01.2
10
-2
10
-1
10
0
150
oC
25
oC
@Notes :
1. V
GS = 0 V
2. 250
µsPulse Test
V
SD
, Source-Drain Voltage [V]
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current




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