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IRFW820A 데이터시트(Datasheet) 2 Page - Fairchild Semiconductor

부품명 IRFW820A
상세내용  Advanced Power MOSFET
PDF  7 Pages
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제조사  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
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IRFW/I820A
500
--
2.0
--
--
--
--
--
0.68
--
--
--
--
--
50
22
12
15
55
17
19
2.6
10
--
--
4.0
100
-100
10
100
3.0
--
510
60
26
35
40
120
45
26
--
--
2.06
390
--
--
--
235
1.2
2.5
8
1.4
--
--
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=60mH, I
AS=2.5A, VDD=50V, RG=27, Starting TJ =25°C
(3) I
SD ≤ 2.5A, di/dt ≤ 100A/µs, VDD ≤ BVDSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250
µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
1&+$11(/
32:(5 026)(7
Electrical Characteristics (T
C=25°C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
BVDSS
∆BV/∆T
J
VGS(th)
RDS(on)
IGSS
IDSS
V
V/
°C
V
nA
µA
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
VGS=0V,ID=250µA
ID=250µA
See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=500V
VDS=400V,TC=125°C
VGS=10V,ID=1.25A
(4)
VDS=50V,ID=1.25A
(4)
VDD=250V,ID=2.5A,
RG=18Ω
See Fig 13
(4) (5)
VDS=400V,VGS=10V,
ID=2.5A
See Fig 6 & Fig 12 (4) (5)
Drain-to-Source Leakage Current
VGS=0V,VDS=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
TJ=25°C,IS=2.5A,VGS=0V
TJ=25°C,IF=2.5A
diF/dt=100A/µs
(4)




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