2SC5754 datasheet(6/13 Pages) NEC | NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

6 page

Data Sheet PU10008EJ02V0DS

2SC5754

VCE = 3.2 V, f = 0.9 GHz

ICq = 20 mA, 1/2 Duty

300

100

150

250

200

–15

–5

–10

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

Pout

VCE = 3.2 V, f = 2.4 GHz

ICq = 20 mA, 1/2 Duty

300

100

150

250

200

–5

015

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

Pout

VCE = 3.2 V, f = 1.8 GHz

ICq = 4 mA, 1/2 Duty

300

100

150

250

200

–10

–5

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

Pout

VCE = 3.2 V, f = 1.8 GHz

ICq = 20 mA, 1/2 Duty

300

100

150

250

200

–10

–5

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

Pout

VCE = 3.6 V, f = 1.8 GHz

ICq = 4 mA, 1/2 Duty

300

100

150

250

200

–10

–5

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

Pout

VCE = 3.6 V, f = 1.8 GHz

ICq = 20 mA, 1/2 Duty

300

100

150

250

200

–10

–5

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

Pout

Remark The graphs indicate nominal characteristics.

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