2SD2402 datasheet(1/6 Pages) NEC | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

1 page

1998

Document No. D16155EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTOR

2SD2402

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The

2SD2402

transistor

featuring

high

current

capacitance in small dimension.

This transistor is ideal for

DC/DC converters and motor drivers.

FEATURES

• High current capacitance

• Low collector saturation voltage

• Complementary transistor with 2SB1571

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

VCBO

Collector to emitter voltage

VCEO

Emitter to base voltage

VEBO

6.0

Collector current (DC)

IC(DC)

5.0

Collector current (pulse)

IC(pulse)

≤ 10 ms

duty cycle

≤ 50 %

8.0

Base current (DC)

IB(DC)

0.2

Base current (pulse)

IB(pulse)

≤ 10 ms

duty cycle

≤ 50 %

0.4

Total power dissipation

16 cm

× 0.7 mm ceramic board mounted

2.0

Junction temperature

150

°C

Storage temperature

Tstg

−55 to +150

°C

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