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IRFB4321PBF 데이터시트(Datasheet) 2 Page - International Rectifier

부품명 IRFB4321PBF
상세내용  HEXFET Power MOSFET
PDF  8 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRFB4321PbF
2
www.irf.com
S
D
G
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.095mH
RG = 25Ω, IAS = 50A, VGS =10V. Part not recommended for use
above this value.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Rθ is measured at TJ approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
150
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
12
15
m
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
1.0
mA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG(int)
Internal Gate Resistance
–––
0.8
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
130
–––
–––
S
Qg
Total Gate Charge
–––
71
110
nC
Qgs
Gate-to-Source Charge
–––
24
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
21
–––
td(on)
Turn-On Delay Time
–––
18
–––
ns
tr
Rise Time
–––
60
–––
td(off)
Turn-Off Delay Time
–––
25
–––
tf
Fall Time
–––
35
–––
Ciss
Input Capacitance
–––
4460
–––
pF
Coss
Output Capacitance
–––
390
–––
Crss
Reverse Transfer Capacitance
–––
82
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
83
c
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
330
A
(Body Diode)
d
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
89
130
ns
ID = 50A
Qrr
Reverse Recovery Charge
–––
300
450
nC VR = 128V,
IRRM
Reverse Recovery Current
–––
6.5
–––
A
di/dt = 100A/µs
f
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 10V
f
VDD = 75V
TJ = 25°C, IS = 50A, VGS = 0V
f
integral reverse
p-n junction diode.
showing the
ID = 50A
RG = 2.5Ω
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
d
VGS = 10V, ID = 33A
f
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 150V, VGS = 0V, TJ = 125°C
MOSFET symbol
VDS = 75V
Conditions
VGS = 10V
f
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Conditions
VDS = 25V, ID = 50A
ID = 50A
VGS = 20V
VGS = -20V




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