KM641001B/BL

CMOS SRAM

PRELIMINARY

Rev. 3.0

- 1 -

July 1998

Document Title

256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out.

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev.No.

Rev. 0.0

Rev.1.0

Rev. 2.0

Rev.3.0

Remark

Design Target

Preliminary

Final

Final

History

Initial release with Design Target.

Release to Preliminary Data Sheet.

1.1. Replace Design Target to Preliminary.

Release to Final Data Sheet.

2.1. Delete Preliminary.

2.2. Delete 17ns, L-version and Industrial Temperature Part.

2.4. Delete Data Retention Characteristics and Wave form.

2.5. Relex operating current.

3.1. Add Low power Version.

3.2. Add Data Retention chcracteristics.

Speed

Previous

Now

15ns

120mA

120mA

17ns

110mA

-

20ns

100mA

118mA

Draft Data

Feb. 1st 1997

Jun. 1st 1997

Feb. 6th 1998

Jul. 28th 1998