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BU1506DX 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BU1506DX 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1506DX Fig.1. Switching times waveforms. Fig.2. Switching times definitions. Fig.3. Switching times test circuit. Fig.4. Typical DC current gain. h FE = f (IC) parameter V CE Fig.5. Typical base-emitter saturation voltage. V BEsat = f (IC); parameter IC/IB Fig.6. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB IC IB VCE ICsat IBend 64us 26us 20us t t t TRANSISTOR DIODE 0.01 1 100 10 1 10 0.1 Tj = 25 C Tj = 125 C h FE IC / A 5V 1V ICsat 90 % 10 % tf ts IBend IC IB t t - IBM 0.1 1 10 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 Tj = 25 C Tj = 125 C VBESAT / V IC / A IC/IB = 3 4 5 + 150 v nominal adjust for ICsat Lc Cfb D.U.T. LB IBend -VBB Rbe 0.1 1 10 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Tj = 25 C Tj = 125 C VCESAT / V IC / A IC/IB = 5 4 3 September 1997 3 Rev 1.300 |
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