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IRF7905PBF 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRF7905PBF
상세내용  HEXFET Power MOSFET
PDF  10 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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www.irf.com
1
07/10/06
IRF7905PbF
HEXFET® Power MOSFET
SO-8
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Improved Body Diode Reverse Recovery
l 100% Tested for RG
l Lead-Free
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
Absolute Maximum Ratings
Parameter
Q1 Max.
Q2 Max.
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
7.8
8.9
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
6.2
7.1
A
IDM
Pulsed Drain Current
c
62
71
PD @TA = 25°C
Power Dissipation
2.0
2.0
W
PD @TA = 70°C
Power Dissipation
1.3
1.3
Linear Derating Factor
0.016
0.016
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Q1 Max.
Q2 Max.
Units
RθJL
Junction-to-Drain Lead
g
20
20
°C/W
RθJA
Junction-to-Ambient
fg
62.5
62.5
± 20
30
-55 to + 150
VDSS
ID
30V
Q1 21.8m
:@V
GS = 10V
7.8A
Q2 17.1m
:@V
GS = 10V
8.9A
RDS(on) max
PD - 97065A




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