전자부품 데이터시트 검색엔진 |
|
BU2506DX 데이터시트(PDF) 5 Page - NXP Semiconductors |
|
BU2506DX 데이터시트(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DX Fig.12. Forward bias safe operating area. T hs = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. Fig.13. Forward bias safe operating area. T hs = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of the envelope. 1 100 100 10 1 0.1 0.01 10 1000 I tp = 10 us 100 us 1 ms 10 ms DC IC / A VCE / V ICM max IC max Ptot max = 0.01 II 1 100 100 10 1 0.1 0.01 10 1000 I tp = 10 us 100 us 1 ms 10 ms DC IC / A VCE / V ICM max IC max II = 0.01 Ptot max September 1997 5 Rev 2.400 |
유사한 부품 번호 - BU2506DX |
|
유사한 설명 - BU2506DX |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |