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2SK3453 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 2SK3453
상세설명  Switching Regulator Applications
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2SK3453
2002-09-02
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3453
Switching Regulator Applications
·
Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.)
·
High forward transfer admittance: |Yfs| = 7.0 S (typ.)
·
Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)
·
Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
700
V
Drain-gate voltage (RGS = 20 kW)
VDGR
700
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
10
Drain current
Pulse
(Note 1)
IDP
30
A
Drain power dissipation (Tc
= 25°C)
PD
80
W
Single pulse avalanche energy
(Note 2)
EAR
420
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.56
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
41.6
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 7.5 mH, RG = 25 W, IAR = 10 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)


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