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2SK3453 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SK3453 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK3453 2002-09-02 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3453 Switching Regulator Applications · Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) · High forward transfer admittance: |Yfs| = 7.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 700 V) · Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 700 V Drain-gate voltage (RGS = 20 kW) VDGR 700 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 10 Drain current Pulse (Note 1) IDP 30 A Drain power dissipation (Tc = 25°C) PD 80 W Single pulse avalanche energy (Note 2) EAR 420 mJ Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.56 °C/W Thermal resistance, channel to ambient Rth (ch-a) 41.6 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 7.5 mH, RG = 25 W, IAR = 10 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16F1B Weight: 5.8 g (typ.) |
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