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| IXFE44N50QD2 |
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IXYS |
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2 page
IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344 ISOPLUS-227 B Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 1 mA 500 V V GS(th) V DS = VGS, ID = 4 mA 2 4 V I GSS V GS = ±20 VDC, VDS = 0 ±100 nA I DSS V DS = VDSS T J = 25°C 100 µA V GS = 0 V T J = 125°C2 mA R DS(on) V GS = 10 V, ID = IT 44N50Q 0.12 Ω 48N50Q 0.11 Ω Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 % Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs V DS = 10 V, ID = IT, pulse test 30 36 S C iss 8000 pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz 930 pF C rss 220 pF t d(on) 33 ns t r V GS = 10 V, V DS = 0.5 VDSS, ID = IT 22 ns t d(off) R G = 1 Ω (External) 75 ns t f 10 ns Q g(on) 190 nC Q gs V GS = 10 V, V DS = 0.5 VDSS, ID = IT 40 nC Q gd 86 nC R thJC 0.31 K/W R thCK 0.07 K/W Ultra-fast Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. I R T J= 25°C; V R= VRRM 200 µA T J= 150°C; VR= 0.8VRRM 2.5 mA V F I F = 60A, VGS = 0 V 2.05 V Note1 T J = 150°C 1.4 V t rr I I = 1A, di/dt = -200 A/µs, VR = 30 V, TJ = 25°C35 50 ns I RM I F= 60A, di/dt = -100 A/µs, VR = 100 V, TJ = 100°C 8.3 A R thJC 0.7 K/W R thJK 0.05 K/W Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2. IXFE44N50 I T = 22A IXFE48N50 I T = 24A IXFE44N50QD2 IXFE48N50QD2 IXFE44N50QD3 IXFE48N50QD3 Please note: For characteristic curves please see IXFK48N50Q |
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