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6 page 
H7N0608LD, H7N0608LS, H7N0608LM Rev.1.00, Oct.30.2003, page 6 of 11 1 0.1 0.3 3 10 30 100 010 20 30 40 50 100 1000 300 100 80 60 40 20 0 20 16 12 8 4 40 80 120 160 200 0 1000 100 300 30 10 1 3 0.1 0.3 3 10 100 1000 100 300 30 3 10 1 30 30 1 10 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 85 A VGS VDS VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % Rg = 4.7 Ω tr tr td(on) td(off) tf tf 3000 10000 di / dt = 100 A / µs VGS = 0, Ta = 25°C VDD = 50 V 25 V 10 V VDD = 50 V 25 V 10 V Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics |
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