BU4525AF datasheet(4/6 Pages) PHILIPS

부품명	BU4525AF

상세설명	Silicon Diffused Power Transistor

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4525AF

Fig.7. High and low DC current gain.

Fig.8. Typical base-emitter saturation voltage.

Fig.9. Typical collector storage and fall time.

I

C =9 A; Tj = 85˚C; f = 16kHz

Fig.10. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C

Fig.11. Transient thermal impedance.

Fig.12. I

Csat during normal running vs. frequency of

operation for optimum performance

0.01

0.1

1

10

100

1

10

100

BU4525 5V

VCE = 5V

hFE

IC / A

Ths = 85 C

Ths = 25 C

0

20

40

60

80

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

01

23

4

0.6

0.7

0.8

0.9

1

1.1

1.2

IC = 9 A

IC = 7 A

Ths = 25 C

Ths = 85 C

BU4525AF/X/W

IB / A

VBEsat / V

1.0E-07

1.0E-05

1.0E-03

1.0E-01

1.0E+01

0.001

0.01

0.1

1

10

0

0.2

0.1

0.05

0.02

0.5

BU4525AF

t / s

Zth K/W

D =

tp

T

P

t

D

012

34

0

2

4

6

8

10

ICsat = 9 A

Ths = 85 C

Freq = 16 kHz

ts

tf

IB / A

ts/tf / us

0

2040

6080

100

0

2

4

6

8

10

Ic(sat) (A)

Frequency (kHz)

October 1998

4

Rev 1.100

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