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HAT2058R

 Silicon N Channel Power MOS FET High Speed Power Switching ( 10 Page)


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HAT2058R/HAT2058RJ
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di / dt = 50 A /
µs
V
= 0, Ta = 25
°C
GS
10
20
50
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
I
= 4 A
D
VGS
VDS
V
= 80V
50V
25V
DD
V
= 80 V
50 V
25 V
DD
V
= 10 V, V
= 30 V
PW = 5
µs, duty < 1 %
GS
DD
t f
r
t
d(on)
t
d(off)
t
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage
VDS (V)
Gate Charge
Qg (nc)
Dynamic Input Characteristics
Drain Current
ID (A)
Switching Characteristics
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관련 부품명

부품명상세내용Html View제조사
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UPA1572HFAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY 1 2 3 4 NEC

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