NESG270034 datasheet(6/11 Pages) CEL | NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

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상세내용

NESG270034

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) ( 11 Page)

CEL

6 page

EVALUATION CIRCUIT (f = 460 MHz)

RF IN

VBE

RF OUT

VCE

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

EVALUATION BOARD (f = 460 MHz)

GND VBE

34-04

VCE GND

Notes

1. 38

× 38 mm, t = 0.8 mm double sided copper clad glass epoxy PWB.

2. Back side: GND pattern

3. Solder gold plated on pattern

: Through holes

Preliminary Data Sheet PU10577EJ01V0DS

NESG270034

1 2 3 4 5 6 7 8 9 10 11

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