NESG270034 datasheet(1/11 Pages) CEL | NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

1 page

FEATURES

• This product is suitable for medium output power (2 W) amplification

Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz

Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz

• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V

• 3-pin power minimold (34 PKG)

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

NESG270034

NESG270034-AZ

3-pin power minimold

(34 PKG) (Pb-Free)

Note1,

25 pcs

(Non reel)

• Magazine case

NESG270034-T1

NESG270034-T1-AZ

1 kpcs/reel

• 12 mm wide embossed taping

• Pin 2 (Emitter) face the perforation side of the tape

Notes 1. Contains Lead in the part except the electrode terminals.

2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

9.2

Emitter to Base Voltage

VEBO

2.8

Collector Current

750

Total Power Dissipation

Ptot

Note

1.9

Junction Temperature

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 34.2 cm

2 × 0.8 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

NPN SILICON GERMANIUM RF TRANSISTOR

NESG270034

NPN SiGe RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (2 W)

3-PIN POWER MINIMOLD (34 PKG)

Document No. PU10577EJ01V0DS (1st edition)

Date Published September 2005 CP(K)

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