SI5941DU datasheet(2/3 Pages) VISHAY

부품명	SI5941DU

상세설명	Dual P-Channel 8-V (D-S) MOSFET

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Vishay Siliconix

SPICE Device Model Si5941DU

www.vishay.com

Document Number: 74132

S-52019

⎯Rev. A, 03-Oct-05

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250μA

0.80

V

On-State Drain Current

a

ID(on)

VDS ≤ −5V, VGS = −4.5V

54

A

VGS = −4.5V, ID = −3.6 A

0.058

0.055

VGS = −2.5V, ID = −2.9 Α

0.083

0.086

Drain-Source On-State Resistance

a

rDS(on)

VGS = −1.8V, ID = −0.66 Α

0.114

0.125

Ω

Forward Transconductance

a

gfs

VDS = −4V, ID = −3.6 A

9

8

S

Diode Forward Voltage

a

VSD

IS = −1A, VGS = 0 V

−0.80

V

Dynamic

b

Input Capacitance

Ciss

589

700

Output Capacitance

Coss

103

325

Reverse Transfer Capacitance

Crss

VDS = −4 V, VGS = 0 V, f = 1 MHz

57

220

pF

VDS = −4 V, VGS = −8 V, ID = −5 A

9.5

11

Total Gate Charge

Qg

5.7

6.5

Gate-Source Charge

Qgs

1.3

Gate-Drain Charge

Qgd

VDS = −4 V, VGS = −4.5 V, ID = −5 A

1.5

nC

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

유사한 부품 번호 - SI5941DU

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Vishay Siliconix	SI5943DU	272Kb / 3P	Dual P-Channel 12-V (D-S) MOSFET Rev. A, 24-Jul-06
	SI5943DU	108Kb / 7P	Dual P-Channel 12-V (D-S) MOSFET 01-Jan-2022
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유사한 설명 - SI5941DU

제조업체	부품명	데이터시트	상세설명
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	SI3905DV	107Kb / 6P	Dual P-Channel 8-V (D-S) MOSFET 01-Jan-2022
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SI5941DU 데이터시트(PDF) 2 Page - Vishay Siliconix

SI5941DU 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - SI5941DU

유사한 설명 - SI5941DU

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