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SST25LF020A-33-4I-S2AE 데이터시트(PDF) 1 Page - Silicon Storage Technology, Inc

부품명 SST25LF020A-33-4I-S2AE
상세설명  2 Mbit / 4 Mbit SPI Serial Flash
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제조업체  SST [Silicon Storage Technology, Inc]
홈페이지  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

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©2006 Silicon Storage Technology, Inc.
S71242-05-000
1/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
FEATURES:
Single 3.0-3.6V Read and Write Operations
Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
33 MHz Max Clock Frequency
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
– Active Read Current: 7 mA (typical)
– Standby Current: 8 µA (typical)
Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
Fast Erase and Byte-Program:
– Chip-Erase Time: 70 ms (typical)
– Sector- or Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 14 µs (typical)
Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
End-of-Write Detection
– Software Status
Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
Software Write Protection
– Write protection through Block-Protection bits in
status register
Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
– Extended: -20°C to +85°C
Packages Available
– 8-lead SOIC 150 mil body width
for SST25LF020A
– 8-lead SOIC 200 mil body width
for SST25LF040A
– 8-contact WSON (5mm x 6mm)
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
SST’s serial flash family features a four-wire, SPI-com-
patible interface that allows for a low pin-count package
occupying less board space and ultimately lowering total
system costs. SST25LF020A/040A SPI serial flash
memories are manufactured with SST’s proprietary, high
performance CMOS SuperFlash technology. The split-
gate cell design and thick-oxide tunneling injector attain
better reliability and manufacturability compared with
alternate approaches.
The SST25LF020A/040A devices significantly improve
performance, while lowering power consumption. The
total energy consumed is a function of the applied volt-
age, current, and time of application. Since for any given
voltage range, the SuperFlash technology uses less cur-
rent to program and has a shorter erase time, the total
energy consumed during any Erase or Program operation
is less than alternative flash memory technologies. The
SST25LF020A/040A devices operate with a single 3.0-
3.6V power supply.
The SST25LF020A devices are offered in an 8-lead SOIC
150 mil body width (SA) package. The SST25LF040A
devices are offered in an 8-lead SOIC 200 mil body width
(S2A) package. All densities are offered in the 8-contact
WSON package. See Figure 1 for the pin assignments.
2 Mbit / 4 Mbit SPI Serial Flash
SST25LF020A / SST25LF040A
SST25LF020A / 040A2Mb / 4Mb Serial Peripheral Interface (SPI) flash memory


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