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| XN04381 |
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 PANASONIC
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XN04381 2 SJJ00068BED • Tr2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. ■ Electrical Characteristics T a = 25°C ± 3°C • Tr1 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 0 160 40 120 80 0 500 200 400 100 300 Ambient temperature T a (°C) Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 050 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, I B = 050 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, I C = 0 0.1 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 80 Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.3 mA 0.25 V Output voltage high-level VOH VCC = 5 V, V B = 0.5 V, R L = 1 kΩ 4.9 V Output voltage low-level VOL VCC = 5 V, VB = 3.5 V, RL = 1 kΩ 0.2 V Input resistance R1 −30% 47 +30% k Ω Resistance ratio R1 / R2 0.8 1.0 1.2 Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, I B = 0 −50 V Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 −1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 −1 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 −2mA Forward current transfer ratio hFE VCE = −10 V, I C = −100 mA 50 Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −5 mA − 0.25 V Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 500 Ω−4.9 V Output voltage low-level VOL VCC = −5 V, V B = −3.5 V, R L = 500 Ω− 0.2 V Input resistance R1 −30% 4.7 +30% k Ω Resistance ratio R1 / R2 0.8 1.0 1.2 Transition frequency fT VCB = −10 V, I E = 50 mA, f = 200 MHz 200 MHz |
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