©2005 SST Communications Corp.

S71300-02-000

3/06

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Preliminary Specifications

FEATURES:

•

High Gain:

– Typically 29 dB gain across 2.4~2.5 GHz over

temperature 0°C to +85°C

•

High linear output power:

– >28 dBm P1dB

- Please refer to “Absolute Maximum Stress

Ratings” on page 4

– Meets 802.11g OFDM ACPR requirement up to

23 dBm

– ~4% added EVM up to 21 dBm for

54 Mbps 802.11g signal

– Meets 802.11b ACPR requirement up to 23 dBm

•

High power-added efficiency/Low operating

current for both 802.11g/b applications

•

•

Low idle current

•

High-speed power-up/down

– Turn on/off time (10%- 90%) <100 ns

– Typical power-up/down delay with driver delay

included <200 ns

•

High temperature stability

– ~1 dB gain/power variation between 0°C to +85°C

•

Low shut-down current (< 0.1 µA)

•

Excellent On-chip power detection

– <+/- 0.3dB variation between 0°C to +85°C

– <+/- 0.4dB variation with 2:1 VSWR mismatch

– <+/- 0.3dB variation Ch1 through Ch14

•

20 dB dynamic range on-chip power detection

•

Simple input/output matching

•

Packages available

– 16-contact VQFN – 3mm x 3mm

•

All non-Pb (lead-free) devices are RoHS compliant

APPLICATIONS:

•

WLAN (IEEE 802.11g/b)

•Home RF

•

Cordless phones

•

2.4 GHz ISM wireless equipment

PRODUCT DESCRIPTION

The SST12LP14A is a versatile power amplifier based on

the highly-reliable InGaP/GaAs HBT technology.

The SST12LP14A can be easily configured for high-power

applications with good power-added efficiency while oper-

ating over the 2.4- 2.5 GHz frequency band. It typically pro-

= 22 dBm for 802.11g and 25% power-added efficiency @

The SST12LP14A has excellent linearity, typically ~4%

added EVM at 21 dBm output power which is essential for

54 Mbps 802.11g operation while meeting 802.11g spec-

trum mask at 23 dBm. The SST12LP14A can also be con-

figured for high-efficiency operation (typically 17 dBm linear

54 Mbps 802.11g output power at 85 mA total power con-

sumption) which is desirable in embedded applications

such as in hand-held units.

The SST12LP14A also features easy board-level usage

along with high-speed power-up/down control through a

single combined reference voltage pin. Ultra-low reference

lable by an on/off switching signal directly from the base-

band chip. These features coupled with low operating

current make the SST12LP14A ideal for the final stage

power amplification in battery-powered 802.11g/b WLAN

transmitter applications.

The SST12LP14A has an excellent on-chip, single-ended

power detector, which features wide-range (>15 dB) with

dB-wise linearization and high stability over temperature (<

+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across

Channels 1 through 14), and output load (<+/-0.4 dB

with 2:1 output VSWR all phases). The excellent on-

chip power detector provides a reliable solution to

board-level power control.

The SST12LP14A is offered in 16-contact VQFN package.

See Figure 2 for pin assignments and Table 1 for pin

descriptions.

2.4 GHz High-Power, High-Gain Power Amplifier

SST12LP14A

SST-GP1214A2.4 GHz High Gain High Power PA