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SST32HF3242 데이터시트(PDF) 3 Page - Silicon Storage Technology, Inc |
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SST32HF3242 데이터시트(HTML) 3 Page - Silicon Storage Technology, Inc |
3 / 36 page Preliminary Specifications Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF1642 / SST32HF1682 / SST32HF3242 / SST32HF3282 SST32HF1622C / SST32HF1642C / SST32HF3242C 3 ©2005 Silicon Storage Technology, Inc. S71253-03-000 5/05 Flash Word-Program Operation The flash memory bank of the SST32HFx2/x2C devices is programmed on a word-by-word basis. Before Program operations, the memory must be erased first. The Program operation consists of three steps. The first step is the three- byte load sequence for Software Data Protection. The sec- ond step is to load word address and word data. During the Word-Program operation, the addresses are latched on the falling edge of either BEF# or WE#, whichever occurs last. The data is latched on the rising edge of either BEF# or WE#, whichever occurs last. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or BEF#, whichever occurs first. The Pro- gram operation, once initiated, will be completed, within 10 µs. See Figures 7 and 8 for WE# and BEF# controlled Pro- gram operation timing diagrams and Figure 21 for flow- charts. During the Program operation, the only valid flash Read operations are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. During the command sequence, WP# should be statically held high or low. Any SDP commands loaded during the internal Program operation will be ignored. Flash Sector/Block-Erase Operation The Flash Sector/Block-Erase operation allows the system to erase the device on a sector-by-sector (or block-by- block) basis. The SST32HFx2/x2C offer both Sector-Erase and Block-Erase mode. The sector architecture is based on uniform sector size of 2 KWord. The Block-Erase mode is based on uniform block size of 32 KWord. The Sector- Erase operation is initiated by executing a six-byte com- mand sequence with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The address lines AMS-A11 are used to determine the sector address. The Block-Erase operation is initiated by executing a six-byte command sequence with Block-Erase command (50H) and block address (BA) in the last bus cycle. The address lines AMS-A15 are used to determine the block address. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase operation can be determined using either Data# Polling or Toggle Bit methods. See Figures 12 and 13 for timing waveforms. Any commands issued during the Sector- or Block-Erase operation are ignored, WP# should be statically held high or low. Erase-Suspend/Erase-Resume Commands The Erase-Suspend operation temporarily suspends a Sector- or Block-Erase operation thus allowing data to be read from any memory location, or program data into any sector/block that is not suspended for an Erase operation. The operation is executed by issuing one byte command sequence with Erase-Suspend command (B0H). The device automatically enters read mode typically within 20 µs after the Erase-Suspend command had been issued. Valid data can be read from any sector or block that is not suspended from an Erase operation. Reading at address location within erase-suspended sectors/blocks will output DQ2 toggling and DQ6 at “1”. While in Erase-Suspend mode, a Word-Program operation is allowed except for the sector or block selected for Erase-Suspend. To resume Sector-Erase or Block-Erase operation which has been suspended the system must issue Erase Resume command. The operation is executed by issuing one byte command sequence with Erase Resume command (30H) at any address in the last Byte sequence. Flash Chip-Erase Operation The SST32HFx2/x2C provide a Chip-Erase operation, which allows the user to erase the entire memory array to the “1” state. This is useful when the entire device must be quickly erased. The Chip-Erase operation is initiated by executing a six- byte command sequence with Chip-Erase command (10H) at address 5555H in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or BEF#, whichever occurs first. During the Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 6 for the command sequence, Figure 10 for tim- ing diagram, and Figure 25 for the flowchart. Any com- mands issued during the Chip-Erase operation are ignored. Write Operation Status Detection The SST32HFx2/x2C provide two software means to detect the completion of a write (Program or Erase) cycle, in order to optimize the system Write cycle time. The soft- ware detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE#, which ini- tiates the internal Program or Erase operation. |
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