2N6059_03 datasheet(1/4 Pages) STMICROELECTRONICS | SILICON NPN POWER DARLINGTON TRANSISTOR

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2N6059

SILICON NPN POWER DARLINGTON TRANSISTOR

STMicrolectronics PREFERRED

SALESTYPE

HIGH GAIN

NPN DARLINGTON

HIGH CURRENT

HIGH DISSIPATION

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The 2N6059 is a silicon Epitaxial-Base NPN

transistor in monolithic Darlington configuration

mounted in Jedec TO-3 metal case.

It is inteded for use in power linear and low

frequency switching applications.

INTERNAL SCHEMATIC DIAGRAM

February 2003

TO-3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

100

VCEX

Collector-Emitter Voltage (VBE = -1.5V)

100

VCEO

Collector-Emitter Voltage (IB = 0)

100

VEBO

Emitter-Base Voltage (IC = 0)

Collector Current

ICM

Collector Peak Current (tp < 5 ms)

Base Current

0.2

Ptot

Total Dissipation at Tc

≤ 25 oC

150

Tstg

Storage Temperature

-65 to 200

Max. Operating Junction Temperature

200

R1 Typ. = 6 K

Ω

R2 Typ. = 55

Ω

1/4

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