2N6059_03 datasheet(2/4 Pages) STMICROELECTRONICS | SILICON NPN POWER DARLINGTON TRANSISTOR

부품명

상세내용

2N6059_03

SILICON NPN POWER DARLINGTON TRANSISTOR ( 4 Page)

STMICROELECTRONICS

2 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.17

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEX

Collector Cut-off

Current (VBE = -1.5V)

VCE = rated VCEX

Tc = 150

o C

0.5

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 50 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

100

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 6 A

IB = 24 mA

IC = 12 A

IB = 120 mA

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 12 A

IB = 120 mA

VBE

∗

Base-Emitter Voltage

IC = 6 A

VCE = 3 V

2.8

hFE

∗

DC Current Gain

IC = 6 A

VCE = 3 V

IC = 12 A

VCE = 3 V

750

100

Transition frequency

IC = 5 A

VCE = 3 V

f =1 MHz

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2N6059

2/4

1 2 3 4

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