전자부품 데이터시트 검색엔진 |
|
SST34HF162C 데이터시트(PDF) 10 Page - Silicon Storage Technology, Inc |
|
SST34HF162C 데이터시트(HTML) 10 Page - Silicon Storage Technology, Inc |
10 / 26 page 10 Preliminary Specifications 16 Mbit Dual-Bank Flash + 2/4 Mbit SRAM ComboMemory SST34HF162C / SST34HF164C ©2004 Silicon Storage Technology, Inc. S71269-01-000 9/04 TABLE 6: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V) Symbol Parameter Limits Test Conditions Min Max Units IDD1 Active VDD Current Address input = VILT/VIHT, at f=5 MHz, VDD=VDD Max, all DQs open Read OE#=VIL, WE#=VIH Flash 15 mA BEF#=VIL, BES#=VIH SRAM 10 mA BEF#=VIH, BES#=VIL Concurrent Operation 45 mA BEF#=VIH, BES#=VIL Write2 WE#=VIL Flash 40 mA BEF#=VIL, BES#=VIH, OE#=VIH SRAM 30 mA BEF#=VIH, BES#=VIL ISB Standby VDD Current 30 µA VDD = VDD Max, BEF#=BES#=VIHC ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VILC Input Low Voltage (CMOS) 0.3 V VDD=VDD Max VIH Input High Voltage 0.7 VDD VVDD=VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max VOLF Flash Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOHF Flash Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min VOLS SRAM Output Low Voltage 0.4 V IOL =1 mA, VDD=VDD Min VOHS SRAM Output High Voltage 2.2 V IOH =-500 µA, VDD=VDD Min T6.1 1269 1. See Figure 16 2. IDD active while Erase or Program is in progress. TABLE 7: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Write Operation 100 µs T7.0 1269 TABLE 8: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 20 pF CIN1 Input Capacitance VIN = 0V 16 pF T8.0 1269 TABLE 9: FLASH RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T9.0 1269 |
유사한 부품 번호 - SST34HF162C |
|
유사한 설명 - SST34HF162C |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |