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TSH690 데이터시트(PDF) 7 Page - STMicroelectronics

부품명 TSH690
상세설명  40MHz to 1GHz AMPLIFIER
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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TSH690 DESCRIPTION
The TSH690 is a 2 transistor stages amplifier run-
ning within the 40MHz-1GHz frequency band fea-
turing a gain of 28dB at 433MHz. The TSH690 is
50
Ω input/output internally matched from 300MHz
to 1000MHz. The open collector output requires
an inductive load for the impedance matching and
also to reach an output power of +13,5dBm at 3V
and +18dBm at 4V. A bias control pin allows tun-
ing of current consumption and amplification
mode.
As the matter of fact, when the bias pin is tied to
the supply voltage, amplification is linear (Class A)
while a lower voltage leads to a Class A-B amplifi-
cation featuring a better efficiency. If the control
voltage is grounded, the TSH690 is set in Pow-
er-down mode without current consumption.
MATCHING THE OUTPUT WITH L2
Within the 300-1000MHz band, although the cir-
cuit is matched, the output return loss (S22) can
be improved by adapting the value of the inductor
L2. This inductor is connected between the RF
output and V
CC2.
L2 = 56 nH gives an output return loss of -19 dB at
450 MHz.
L2 = 10 nH gives an output return loss of - 8 dB at
900 MHz.
In a 433 or 450 MHz transmitter application, L1
and L2 can be optimized to reduce the second
harmonic by choosing L1 = 33nH and L2 = 15nH.
Below 300MHz, using the S-parameters matrix,
specific input/output matching networks can be
calculated to maximize electrical performances.
DC BLOCKING
Because input/output are respectively internal/ex-
ternal biased, DC blocks (C1, C2) are recom-
mended on both RF ports to guarantee a DC iso-
lation from the next cells. Above 500MHz, 100pF
is suggested whereas below, 1nF is better and far
below (less than 100MHz), 10nF is prefered.
BIASING
The amplifier can operate in the range of 1.5V to
5V and offers a bias current adjust function (Vbias
pin) which enables the trimming of the RF output
power (AB class Amplifier) by tuning a series vari-
able resistor (Rbias).
When Vbias is wired to the Vcc rail, the current
consumption is maximized getting the best linear-
ity (A class Amplifier) whereas biasing to Ground,
the IC is set in power down mode.
For higher supply voltage than 4V to reach high
output power, the serial resistor (R1) is strongly
recommended to increase the efficiency of the
amplifier and therefore reduce the thermal dissi-
pation of the circuit.
DECOUPLING
As with any RF devices, the supply voltage decou-
pling must be done carefully using a 1nF bypass
capacitor (C3, C5) placed as close as possible to
the device pins and could be also improved by
adding a 150nH RF choke inductance (L1). Con-
cerning the Vbias pin, a 10nF decoupling capaci-
tor (C4) is recommended while placing on board is
not critical. Note that Surface Mounted Devices
(SMD) components are prefered for RF applica-
tions due to the right behaviour in high frequencies
while low inductor values (few 10nH) can be print-
ed on board.
Figure 4 : Demonstration board schematic


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