전자부품 데이터시트 검색엔진 |
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NE321000 데이터시트(PDF) 2 Page - California Eastern Labs |
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NE321000 데이터시트(HTML) 2 Page - California Eastern Labs |
2 / 6 page SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage V -3.0 IDS Drain Current mA IDSS IG Gate Current µA 100 PT2 Total Power Dissipation mW 200 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Chip mounted on Alumina heat sink. NE321000 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature, TA (°C) Frequency, f (GHz) MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. DRAIN CURRENT 250 200 150 100 50 0 50 100 150 200 250 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE Drain to Source Voltage, VDS (V) Gate to Source Voltage, VGS (V) VGS = 0 V -0.2 V -0.4 V -0.6 V 2.0 1.0 0 20 40 60 80 100 VDS = 2 V 0 -1.0 -2.0 0 20 40 60 TYPICAL PERFORMANCE CURVES (TA = 25°C) VDS = 2 V ID = 10 mA MSG. (S21S)2 24 30 20 14 10 8 6 4 2 1 4 8 12 16 20 RECOMMENDED OPERATING CONDITIONS (TA = 25°C) PART NUMBER NE321000 SYMBOLS PARAMETERS UNITS MIN TYP MAX VDS Drain to Source Voltage V 1 2 3 ID Drain Current mA 5 10 15 PIN Input Power dBm – – 0 |
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