BD242BFP datasheet(2/4 Pages) STMICROELECTRONICS

부품명	BD242BFP

상세설명	COMPLEMENTARY SILICON POWER TRANSISTORS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

5.3

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 60 V

0.3

mA

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 80 V

0.2

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

1

mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 30 mA

80

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 3 A

IB = 0.6 A

1.2

V

VBE(ON)

∗ Base-Emitter Voltage

IC = 3 A

VCE = 4 V

1.8

V

hFE*

DC Current Gain

IC = 1 A

VCE = 4 V

IC = 3 A

VCE = 4 V

25

10

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

For PNP types voltage and current values are negative.

Safe Operating Area

BD241BFP / BD242BFP

2/4

유사한 부품 번호 - BD242BFP

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STMicroelectronics	BD242BFP	29Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS April 1998

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BD242BFP 데이터시트(PDF) 2 Page - STMicroelectronics

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유사한 부품 번호 - BD242BFP

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