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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SST39VF6402B-90-4C-EK 데이터시트(PDF) 2 Page - Silicon Storage Technology, Inc |
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SST39VF6402B-90-4C-EK 데이터시트(HTML) 2 Page - Silicon Storage Technology, Inc |
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2 / 30 page  2 Data Sheet 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B ©2006 Silicon Storage Technology, Inc. S71288-02-000 7/06 Device Operation Commands are used to initiate the memory operation func- tions of the device. Commands are written to the device using standard microprocessor write sequences. A com- mand is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. The SST39VF640xB also have the Auto Low Power mode which puts the device in a near standby mode after data has been accessed with a valid Read operation. This reduces the IDD active read current from typically 9 mA to typically 3 µA. The Auto Low Power mode reduces the typi- cal IDD active read current to the range of 2 mA/MHz of Read cycle time. The device exits the Auto Low Power mode with any address transition or control signal transition used to initiate another Read cycle, with no access time penalty. Note that the device does not enter Auto-Low Power mode after power-up with CE# held steadily low, until the first address transition or CE# is driven high. Read The Read operation of the SST39VF640xB is controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output con- trol and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 3). Word-Program Operation The SST39VF640xB are programmed on a word-by-word basis. Before programming, the sector where the word exists must be fully erased. The Program operation is accomplished in three steps. The first step is the three-byte load sequence for Software Data Protection. The second step is to load word address and word data. During the Word-Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Pro- gram operation, once initiated, will be completed within 10 µs. See Figures 4 and 5 for WE# and CE# controlled Pro- gram operation timing diagrams and Figure 19 for flow- charts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Pro- gram operation, the host is free to perform additional tasks. Any commands issued during the internal Program opera- tion are ignored. During the command sequence, WP# should be statically held high or low. Sector/Block-Erase Operation The Sector- (or Block-) Erase operation allows the system to erase the device on a sector-by-sector (or block-by- block) basis. The SST39VF640xB offer both Sector-Erase and Block-Erase mode. The sector architecture is based on uniform sector size of 2 KWord. The Block-Erase mode is based on uniform block size of 32 KWord. The Sector- Erase operation is initiated by executing a six-byte com- mand sequence with Sector-Erase command (50H) and sector address (SA) in the last bus cycle. The Block-Erase operation is initiated by executing a six-byte command sequence with Block-Erase command (30H) and block address (BA) in the last bus cycle. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (50H or 30H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of- Erase operation can be determined using either Data# Polling or Toggle Bit methods. See Figures 9 and 10 for tim- ing waveforms and Figure 23 for the flowchart. Any com- mands issued during the Sector- or Block-Erase operation are ignored. When WP# is low, any attempt to Sector- (Block-) Erase the protected block will be ignored. During the command sequence, WP# should be statically held high or low. Erase-Suspend/Erase-Resume Commands The Erase-Suspend operation temporarily suspends a Sector- or Block-Erase operation thus allowing data to be read from any memory location, or program data into any sector/block that is not suspended for an Erase operation. The operation is executed by issuing one byte command sequence with Erase-Suspend command (B0H). The device automatically enters read mode typically within 20 µs after the Erase-Suspend command had been issued. Valid data can be read from any sector or block that is not suspended from an Erase operation. Reading at address location within erase-suspended sectors/blocks will output DQ2 toggling and DQ6 at “1”. While in Erase-Suspend mode, a Word-Program operation is allowed except for the sector or block selected for Erase-Suspend. To resume Sector-Erase or Block-Erase operation which has been suspended the system must issue Erase Resume command. The operation is executed by issuing one byte command sequence with Erase Resume command (30H) at any address in the last Byte sequence. |
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