Data Sheet

©2006 Silicon Storage Technology, Inc.

S71288-02-000

7/06

1

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

64 Mbit (x16) Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FEATURES:

•

Organized as 4M x16

•

Single Voltage Read and Write Operations

– 2.7-3.6V

•

Superior Reliability

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

•

Low Power Consumption (typical values at 5 MHz)

– Active Current: 9 mA (typical)

– Standby Current: 3 µA (typical)

– Auto Low Power Mode: 3 µA (typical)

•

Hardware Block-Protection/WP# Input Pin

– Top Block-Protection (top 32 KWord)

for SST39VF6402B

– Bottom Block-Protection (bottom 32 KWord)

for SST39VF6401B

•

Sector-Erase Capability

– Uniform 2 KWord sectors

•

Block-Erase Capability

– Uniform 32 KWord blocks

•

Chip-Erase Capability

•

Erase-Suspend/Erase-Resume Capabilities

•

Hardware Reset Pin (RST#)

•

Security-ID Feature

– SST: 128 bits; User: 128 bits

•

Fast Read Access Time:

– 70 ns

– 90 ns

•

Latched Address and Data

•

Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 µs (typical)

•

Automatic Write Timing

•

End-of-Write Detection

– Toggle Bits

– Data# Polling

•

CMOS I/O Compatibility

•

JEDEC Standard

– Flash EEPROM Pin Assignments

– Software command sequence compatibility

- Block-Erase 6th Bus Write Cycle is 30H

- Sector-Erase 6th Bus Write Cycle is 50H

•

Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (8mm x 10mm)

•

All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST39VF640xB devices are 4M x16 CMOS Multi-

Purpose Flash Plus (MPF+) manufactured with SST’s pro-

prietary, high-performance CMOS SuperFlash technology.

The split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST39VF640xB write (Pro-

gram or Erase) with a 2.7-3.6V power supply. These

devices conform to JEDEC standard pin assignments for

x16 memories.

Featuring

high

performance

Word-Program,

the

SST39VF640xB devices provide a typical Word-Program

time of 7 µsec. These devices use Toggle Bit or Data# Poll-

ing to indicate the completion of Program operation. To pro-

tect against inadvertent write, they have on-chip hardware

and Software Data Protection schemes. Designed, manu-

factured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed typical endur-

ance of 100,000 cycles. Data retention is rated at greater

than 100 years.

The SST39VF640xB devices are suited for applications that

require convenient and economical updating of program,

configuration, or data memory. For all system applications,

they significantly improve performance and reliability, while

lowering power consumption. They inherently use less

energy during Erase and Program than alternative flash

technologies. The total energy consumed is a function of

the applied voltage, current, and time of application. Since

for any given voltage range, the SuperFlash technology

uses less current to program and has a shorter erase time,

the total energy consumed during any Erase or Program

operation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high-density, surface mount requirements, the

SST39VF640xB devices are offered in 48-lead TSOP and

48-ball TFBGA packages. See Figures 1 and 2 for pin

assignments.

SST39VF640xB2.7V 64Mb (x16) MPF+ memories