2N3906RL1G datasheet(2/7 Pages) ONSEMI

부품명	2N3906RL1G

상세설명	General Purpose Transistors PNP Silicon

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2N3906

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

−

Vdc

Collector −Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

40

−

Vdc

Emitter −Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

IBL

−

50

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

ICEX

−

50

nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

hFE

60

80

100

60

30

−

300

−

Collector −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc

VCE(sat)

−

0.25

0.4

Vdc

Base −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat)

0.65

−

0.85

0.95

Vdc

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT

250

−

MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

4.5

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

10

pF

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

2.0

12

k

W

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hre

0.1

10

X 10−4

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

100

400

−

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

3.0

60

mmhos

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

NF

−

4.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(VCC = 3.0 Vdc, VBE = 0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)

td

−

35

ns

Rise Time

tr

−

35

ns

Storage Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

ts

−

225

ns

Fall Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

tf

−

75

ns

2. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2%.

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