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STD35NF3LL 데이터시트(PDF) 4 Page - STMicroelectronics |
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STD35NF3LL 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STD35NF3LL 4/13 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating @125°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 16V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 1 2.5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 17.5A VGS = 4.5V, ID = 17.5A 0.014 0.016 0.0195 0.0215 Ω Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward transconductance VDS = 15V, ID = 17.5A 19 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 800 250 60 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 15V, ID = 17.5A RG =4.7Ω VGS = 4.5V (see Figure 12) 17 100 20 21 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 24V, ID = 35A, VGS = 5V, RG =4.7Ω (see Figure 13) 12.5 42 5.2 17 nC nC nC |
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