전자부품 데이터시트 검색엔진 |
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TIP105 데이터시트(PDF) 2 Page - STMicroelectronics |
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TIP105 데이터시트(HTML) 2 Page - STMicroelectronics |
2 / 5 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEO Collector Cut-off Current (IB = 0) VCE = -30 V -50 µA ICBO Collector Cut-off Current (IE = 0) VCE = -60 V -50 µA IEBO Emitter Cut-off Current (IC = 0) VEB = -5 V -8 mA VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0) IC = -30 mA -60 V VCE(sat)* Collector-Emitter Saturation Voltage IC = -3 A IB = -6 mA IC = -8 A IB = -80 mA -2 -2.5 V V VBE* Base-Emitter Voltage IC = -8 A VCE = -4 V -2.8 V hFE* DC Current Gain IC = -3 A VCE = -4 V IC = -8 A VCE = -4 V IC = -3 A VCE = -4 V Group R Group O Group Y 2000 200 2000 4000 8000 18000 5000 9000 18000 VF* Forward Voltage of Commutation Diode (IB = 0) IF = - IC = 10 A -2.8 V The product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails. Safe Operating Area DC Current Gain TIP105 2/5 |
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