BAS16LT3 datasheet(2/4 Pages) ONSEMI

부품명	BAS16LT3

상세설명	Switching Diode

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BAS16LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 75 Vdc)

(VR = 75 Vdc, TJ = 150°C)

(VR = 25 Vdc, TJ = 150°C)

IR

−

1.0

50

30

mAdc

Reverse Breakdown Voltage

(IBR = 100 mAdc)

V(BR)

75

−

Vdc

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

VF

−

715

855

1000

1250

mV

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

−

2.0

pF

Forward Recovery Voltage

(IF = 10 mAdc, tr = 20 ns)

VFR

−

1.75

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 50 W)

trr

−

6.0

ns

Stored Charge

(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)

QS

−

45

pC

Notes: 1. A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820 W

0.1 mF

D.U.T.

VR

100 mH

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

50 W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

유사한 부품 번호 - BAS16LT3

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	BAS16LT3G	45Kb / 4P	Switching Diode May, 2004 ??Rev. 3
	BAS16LT3G	126Kb / 4P	Switching Diode October, 2011 ??Rev. 9
	BAS16LT3G	86Kb / 4P	Switching Diode October, 2016 ??Rev. 12

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유사한 설명 - BAS16LT3

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AiT Semiconductor Inc.	BAV99L	442Kb / 5P	SWITCHING DIODE DUAL SWITCHING DIODE REV2.0
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BAS16LT3 데이터시트(PDF) 2 Page - ON Semiconductor

BAS16LT3 데이터시트(HTML) 2 Page - ON Semiconductor

유사한 부품 번호 - BAS16LT3

유사한 설명 - BAS16LT3

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