BC558BZL1 datasheet(2/7 Pages) ONSEMI

부품명	BC558BZL1

상세설명	Amplifier Transistors PNP Silicon

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BC556B, BC557A, B, C, BC558B, C

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = −2.0 mAdc, IB = 0)

BC556

BC557

BC558

V(BR)CEO

−65

−45

−30

−

V

Collector − Base Breakdown Voltage

(IC = −100 mAdc)

BC556

BC557

BC558

V(BR)CBO

−80

−50

−30

−

V

Emitter − Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

BC556

BC557

BC558

V(BR)EBO

−5.0

−

V

Collector−Emitter Leakage Current

(VCES = −40 V)

BC556

(VCES = −20 V)

BC557

BC558

(VCES = −20 V, TA = 125°C)

BC556

BC557

BC558

ICES

−

−2.0

−

−100

−4.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −5.0 V)

A Series Device

B Series Devices

C Series Devices

(IC = −2.0 mAdc, VCE = −5.0 V)

BC557

A Series Device

B Series Devices

C Series Devices

(IC = −100 mAdc, VCE = −5.0 V)

A Series Device

B Series Devices

C Series Devices

hFE

−

120

180

420

−

90

150

270

−

170

290

500

120

180

300

−

800

220

460

800

−

Collector − Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

(IC = −10 mAdc, IB = see Note 1)

(IC = −100 mAdc, IB = −5.0 mAdc)

VCE(sat)

−

−0.075

−0.3

−0.25

−0.3

−0.6

−0.65

V

Base − Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

(IC = −100 mAdc, IB = −5.0 mAdc)

VBE(sat)

−

−0.7

−1.0

−

V

Base−Emitter On Voltage

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

(IC = −10 mAdc, VCE = −5.0 Vdc)

VBE(on)

−0.55

−

−0.62

−0.7

−0.82

V

SMALL−SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)

BC556

BC557

BC558

fT

−

280

320

360

−

MHz

Output Capacitance

(VCB = −10 V, IC = 0, f = 1.0 MHz)

Cob

−

3.0

6.0

pF

Noise Figure

(IC = −0.2 mAdc, VCE = −5.0 V,

BC556

RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)

BC557

BC558

NF

−

2.0

10

dB

Small−Signal Current Gain

(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)

BC557

A Series Device

B Series Devices

C Series Devices

hfe

125

240

450

−

900

260

500

900

−

1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.

유사한 부품 번호 - BC558BZL1

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	BC558BZL1	107Kb / 8P	Amplifier Transistors June, 2000 ??Rev. 1
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