MJ15022_06 datasheet(2/4 Pages) ONSEMI

부품명	MJ15022

상세설명	Silicon Power Transistors

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 100 mAdc, IB = 0)

MJ15022

MJ15024

VCEO(sus)

200

250

−

Collector Cutoff Current

(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)

MJ15022

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

MJ15024

ICEX

−

250

mAdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

MJ15022

(VCE = 200 vdc, IB = 0)

MJ15024

ICEO

−

500

mAdc

Emitter Cutoff Current

(VCE = 5 Vdc, IB = 0)

IEBO

−

500

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 0.5 s (non−repetitive))

(VCE = 80 Vdc, t = 0.5 s (non−repetitive))

IS/b

5

2

−

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 4 Vdc)

(IC = 16 Adc, VCE = 4 Vdc)

hFE

15

5

60

−

Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

(IC = 16 Adc, IB = 3.2 Adc)

VCE(sat)

−

1.4

4.0

Vdc

Base−Emitter On Voltage

(IC = 8 Adc, VCE = 4 Vdc)

VBE(on)

−

2.2

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

fT

4

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob

−

500

pF

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle v 2%.

100

Figure 1. Active−Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1

0.2

0.5

10

1 k

20

TC = 25°C

50

250

0.1

0.2

1.0

5.0

50

500

100

10

20

BONDING WIRE LIMITED

THERMAL LIMITATION

(SINGLE PULSE)

SECOND BREAKDOWN

LIMITED

There are two limitations on the powerhandling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 200

_C; TC is

variable

depending

on

conditions.

At

high

case

temperatures, thermal limitations will reduce the power that

can be handled to values Ion than the limitations imposed by

second breakdown.

유사한 부품 번호 - MJ15022_06

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MJ15022G	117Kb / 4P	Silicon Power Transistors 16 AMPERES SILICON POWER TRANSISTORS August, 2013 ??Rev. 12
ON Semiconductor	MJ15022	117Kb / 4P	Silicon Power Transistors 16 AMPERES SILICON POWER TRANSISTORS August, 2013 ??Rev. 12
Quanzhou Jinmei Electro...	MJ15022	119Kb / 4P	Silicon NPN Power Transistors

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유사한 설명 - MJ15022_06

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MJ15022	117Kb / 4P	Silicon Power Transistors 16 AMPERES SILICON POWER TRANSISTORS August, 2013 ??Rev. 12
ON Semiconductor	MJD44H11	192Kb / 6P	SILICON POWER TRANSISTORS August, 2004 ??Rev. 6
Motorola, Inc	MJ15022	153Kb / 4P	Silicon Power Transistors
Quanzhou Jinmei Electro...	2SC3298_2014	165Kb / 3P	Silicon Power Transistors
	BUL52B_2015	88Kb / 3P	Silicon Power Transistors
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	2SC3855_2014	126Kb / 3P	Silicon Power Transistors
	2SC3979_2014	152Kb / 3P	Silicon Power Transistors
	2SC3855	126Kb / 3P	Silicon Power Transistors
	2SD1588	119Kb / 3P	Silicon Power Transistors

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MJ15022 데이터시트(PDF) 2 Page - ON Semiconductor

MJ15022 데이터시트(HTML) 2 Page - ON Semiconductor

유사한 부품 번호 - MJ15022_06

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