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MJD112 데이터시트(PDF) 3 Page - ON Semiconductor |
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MJD112 데이터시트(HTML) 3 Page - ON Semiconductor |
3 / 8 page MJD112 (NPN) MJD117 (PNP) http://onsemi.com 3 Figure 3. Thermal Response t, TIME OR PULSE WIDTH (ms) 1 0.01 1000 0.3 0.2 0.07 RqJC(t) = r(t) RqJC RqJC = 6.25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.7 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.2 SINGLE PULSE D = 0.5 0.05 0.1 0.01 Figure 4. Maximum Rated Forward Biased Safe Operating Area Figure 5. Power Derating 2 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.3 100 5 2 0.5 0.2 BONDING WIRE LIMITED THERMAL LIMIT SECOND BREAKDOWN LIMIT 520 3 TJ = 150°C CURVES APPLY BELOW RATED VCEO 100 ms 1ms dc 0.1 1 3 7 10 10 730 25 25 T, TEMPERATURE ( °C) 0 50 75 100 125 15 20 15 10 5 2.5 0 2 1.5 1 0.5 TA TC TA SURFACE MOUNT TC 0.7 5ms 50 70 200 500 ms ACTIVE−REGION SAFE−OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VR, REVERSE VOLTAGE (VOLTS) Cib 0.04 30 1 4 10 40 TC = 25°C 200 10 50 70 100 0.1 2 6 20 20 PNP NPN 0.6 0.4 0.2 0.06 Figure 6. Capacitance Cob |
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