MJE5740_06 datasheet(1/6 Pages) ONSEMI

부품명	MJE5740

상세설명	NPN Silicon Power Darlington Transistors 8 AMPERES 300??00 VOLTS 80 WATTS

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February, 2006 − Rev. 6

1

Publication Order Number:

MJE5740/D

MJE5740, MJE5742

MJE5742 is a Preferred Device

NPN Silicon Power

Darlington Transistors

The MJE5740 and MJE5742 Darlington transistors are designed for

high−voltage power switching in inductive circuits.

Features

• Pb−Free Packages are Available*

Applications

• Small Engine Ignition

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MJE5740

MJE5742

VCEO(sus)

300

400

Vdc

Collector−Emitter Voltage

MJE5740

MJE5742

VCEV

600

800

Vdc

Emitter−Base Voltage

VEB

8

Vdc

Collector Current

− Continuous

− Peak (Note 1)

IC

ICM

8

16

Adc

Base Current

− Continuous

− Peak (Note 1)

IB

IBM

2.5

5

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25

°C

PD

2

16

W

W/

_C

Total Device Dissipation @ TC = 25_C

Derate above 25

°C

PD

80

640

W

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−65 to +150

_C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.25

_C/W

Thermal Resistance, Junction−to−Ambient

RqJA

62.5

_C/W

Maximum Lead Temperature for Soldering

Purposes 1/8

″ from Case for 5 Seconds

TL

275

_C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle

≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

POWER DARLINGTON

TRANSISTORS

8 AMPERES

300−400 VOLTS

80 WATTS

TO−220AB

CASE 221A−09

STYLE 1

1

http://onsemi.com

2

3

Preferred devices are recommended choices for future use

and best overall value.

≈ 100

≈ 50

MARKING

DIAGRAM

MJE574x

= Device Code

x = 0 or 2

G

= Pb−Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

MJE574xG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

유사한 부품 번호 - MJE5740_06

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MJE5740G	89Kb / 6P	NPN Silicon Power Darlington Transistors January, 2015 ??Rev. 12
ON Semiconductor	MJE5740	89Kb / 6P	NPN Silicon Power Darlington Transistors January, 2015 ??Rev. 12

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유사한 설명 - MJE5740_06

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Motorola, Inc	MJE5740	216Kb / 6P	POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS
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ON Semiconductor	2N6387	79Kb / 6P	Plastic Medium?뭁ower Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ??80 VOLTS August, 2006 ??Rev. 12
Motorola, Inc	BU522B	105Kb / 4P	7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS
ON Semiconductor	MJF44H11	115Kb / 5P	SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 36 WATTS April, 2006 ??Rev. 4
Motorola, Inc	MJD6036	270Kb / 6P	SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
Motorola, Inc	MJE5850	302Kb / 8P	8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS
ON Semiconductor	MJE5850	104Kb / 8P	8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS February, 2006 ??Rev. 4
ON Semiconductor	BDX53B	169Kb / 6P	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS 1995 REV 7

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MJE5740 데이터시트(PDF) 1 Page - ON Semiconductor

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