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MJE802G 데이터시트(PDF) 3 Page - ON Semiconductor |
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MJE802G 데이터시트(HTML) 3 Page - ON Semiconductor |
3 / 6 page MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) http://onsemi.com 3 0.04 0.2 2.0 0.1 0.06 0.4 1.0 4.0 IC, COLLECTOR CURRENT (AMP) 2.0 1.0 0.8 0.6 0.4 0.2 ts Figure 2. Switching Times Test Circuit tr td @ VBE(off) = 0 PNP NPN 4.0 0.6 Figure 3. Switching Times V2 APPROX +8.0 V 0 ≈ 6.0 k SCOPE VCC −30 V RC 51 For td and tr, D1 id disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. For NPN test circuit, reverse diode, polarities and input pulses. 25 ms tr, tf ≤ 10 ns DUTY CYCLE = 1.0% + 4.0 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA V1 APPROX −12 V TUT RB D1 ≈ 150 tf VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C t, TIME (ms) 1.0 0.01 0.01 0.5 0.2 0.1 0.05 0.02 0.05 1.0 2.0 5.0 10 20 50 100 200 1000 500 qJC(t) = r(t) qJC qJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D = 0.5 0.2 0.05 0.01 SINGLE PULSE 0.1 0.7 0.3 0.07 0.03 0.02 0.1 0.5 0.2 Figure 4. Thermal Response (MJE700, 800 Series) 0.03 3.0 30 300 0.3 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.1 100 2.0 5.0 0.5 Figure 5. MJE700 Series MJE702, 703 MJE700 dc 1.0 3.0 1.0ms 70 50 30 20 10 7.0 5.0 100 ms TJ = 150°C VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.1 Figure 6. MJE800 Series 100 70 50 30 20 10 7.0 5.0 0.2 0.7 0.3 7.0 10 2.0 5.0 0.5 1.0 3.0 0.2 0.7 0.3 7.0 5.0ms BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 100 ms 1.0ms 5.0ms dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED MJE802, 803 MJE800 ACTIVE−REGION SAFE−OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 are based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150 _C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. |
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