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MC10H162FNG 데이터시트(PDF) 3 Page - ON Semiconductor |
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MC10H162FNG 데이터시트(HTML) 3 Page - ON Semiconductor |
3 / 7 page MC10H162 http://onsemi.com 3 Table 2. ELECTRICAL CHARACTERISTICS (VEE = −5.2 V ±5%) (Note 1) 0° 25° 75° Symbol Characteristic Min Max Min Max Min Max Unit IE Power Supply Current − 84 − 76 − 84 mA IinH Input Current High − 465 − 275 − 275 mA IinL Input Current Low 0.5 − 0.5 − 0.3 − mA VOH High Output Voltage −1.02 −0.84 −0.98 −0.81 −0.92 −0.735 Vdc VOL Low Output Voltage −1.95 −1.63 −1.95 −1.63 −1.95 −1.60 Vdc VIH High Input Voltage −1.17 −0.84 −1.13 −0.81 −1.07 −0.735 Vdc VIL Low Input Voltage −1.95 −1.48 −1.95 −1.48 −1.95 −1.45 Vdc 1. Each MECL 10H™ series circuit has been designed to meet the dc specifications shown in the test table, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 linear fpm is maintained. Outputs are terminated through a 50 W resistor to −2.0 V. Table 3. AC PARAMETERS 0° 25° 75° Symbol Characteristic Min Max Min Max Min Max Unit tpd Propagation Delay Pins 7, 9, 14 Only Pins 2, 15 Only 0.7 0.8 2.0 2.3 0.7 0.8 2.1 2.4 0.8 0.9 2.5 2.6 ns tr Rise Time 0.6 1.8 0.6 1.9 0.6 2.0 ns tf Fall Time 0.6 1.8 0.6 1.9 0.6 2.0 ns NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. |
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