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MMBZ15VDLT1 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 MMBZ15VDLT1
상세설명  40 Watt Peak Power Zener Transient Voltage Suppressors
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBZ15VDLT1 데이터시트(HTML) 2 Page - ON Semiconductor

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MMBZ15VDLT1, MMBZ27VCLT1
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C
Ppk
40
Watts
Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C
Derate above 25
°C
°PD°
225
1.8
°mW°
mW/
°C
Thermal Resistance Junction−to−Ambient
RqJA
556
°C/W
Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C
Derate above 25
°C
°PD°
300
2.4
°mW
mW/
°C
Thermal Resistance Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
− 55 to +150
°C
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
VBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Device
Device
Marking
VRWM
IR @ VRWM
Breakdown Voltage
VC @ IPP (Note 5)
VBR
VBR (Note 4) (V)
@ IT
VC
IPP
Volts
nA
Min
Nom
Max
mA
V
A
mV/
5C
MMBZ15VDLT1, G*
15D
12.8
100
14.3
15
15.8
1.0
21.2
1.9
12
(VF = 1.1 V Max @ IF = 200 mA)
Device
Device
Marking
VRWM
IR @ VRWM
Breakdown Voltage
VC @ IPP (Note 5)
VBR
VBR (Note 4) (V)
@ IT
VC
IPP
Volts
nA
Min
Nom
Max
mA
V
A
mV/
5C
MMBZ27VCLT1, G*
27C
22
50
25.65
27
28.35
1.0
38
1.0
26
*The “G” suffix indicates Pb−Free package available.
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5 and derate per Figure 6


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