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MMBZ15VDLT1 데이터시트(PDF) 2 Page - ON Semiconductor |
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2 / 6 page MMBZ15VDLT1, MMBZ27VCLT1 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C Ppk 40 Watts Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25 °C °PD° 225 1.8 °mW° mW/ °C Thermal Resistance Junction−to−Ambient RqJA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25 °C °PD° 300 2.4 °mW mW/ °C Thermal Resistance Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current VBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) Device Device Marking VRWM IR @ VRWM Breakdown Voltage VC @ IPP (Note 5) VBR VBR (Note 4) (V) @ IT VC IPP Volts nA Min Nom Max mA V A mV/ 5C MMBZ15VDLT1, G* 15D 12.8 100 14.3 15 15.8 1.0 21.2 1.9 12 (VF = 1.1 V Max @ IF = 200 mA) Device Device Marking VRWM IR @ VRWM Breakdown Voltage VC @ IPP (Note 5) VBR VBR (Note 4) (V) @ IT VC IPP Volts nA Min Nom Max mA V A mV/ 5C MMBZ27VCLT1, G* 27C 22 50 25.65 27 28.35 1.0 38 1.0 26 *The “G” suffix indicates Pb−Free package available. 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. Surge current waveform per Figure 5 and derate per Figure 6 |
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